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Chinese memory-chip maker ChangXin Memory Technologies (CXMT) announced the mass production of its fifth-generation DRAM technology platform. This marks a new step in China’s effort to strengthen its domestic memory-chip manufacturing capabilities. The aim is to compete with established global suppliers.
CXMT announced at the 2026 World Manufacturing Convention on September 20. The company also showcased new LPDDR5X memory products based on the platform.
The new platform focuses on increasing memory density while improving manufacturing efficiency. CXMT said it has reduced the active-area half-pitch of its memory array to 11.95 nanometres.
The company used advanced patterning techniques to create smaller structures within the memory array. The spacing allows more memory cells to fit into a chip. It can also increase the number of dies that can be produced from a silicon wafer.
CXMT said, “The fifth-generation platform can deliver more than 50% higher gross die output per wafer than its previous-generation platform under comparable conditions. Higher wafer output could help improve manufacturing efficiency and reduce costs.”
Alongside the platform, CXMT introduced two 24-gigabit LPDDR5X memory products. The company said the new products can store 50% more data than comparable previous-generation offerings. The move gives Chinese electronics manufacturers another domestic source for advanced mobile memory as demand for higher-capacity chips continues to grow.
The announcement comes as CXMT expands its position in the global DRAM market. Till now, it was dominated by Samsung Electronics, SK Hynix and Micron Technology. DRAM acts as short-term working memory in smartphones, computers, servers and other electronic devices.
The latest platform also comes amid China’s broader push to develop domestic semiconductor technologies. US restrictions on advanced semiconductor technology and equipment have increased the pressure on Chinese companies to build local alternatives.
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